• Part: NDP02N60Z
  • Description: N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 187.84 KB
Download NDP02N60Z Datasheet PDF
onsemi
NDP02N60Z
Features - - - - Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb- Free and are Ro HS pliant http://onsemi. VDSS 600 V RDS(on) (TYP) @ 1 A 4.0 W ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain- to- Source Voltage Continuous Drain Current Rq JC Continuous Drain Current Rq JC TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation Rq JC Gate- to- Source Voltage Single Pulse Avalanche Energy, ID = 2.4 A ESD (HBM) (JESD 22- A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 17) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS Vesd VISO 4500 2.4 (Note 1) 1.6 (Note 1) 10 (Note 1) 24 NDF NDP 600 2.4 1.6 10 72 30 120 2500 2.2 1.4 9 57 NDD Unit V A A G (1) A W V m J V V 4 4 dv/dt IS TL TJ, Tstg 4.5 (Note 2) 2.4 260 - 55 to 150 V/ns A °C °C 1 2 1 1 3 2 2 3 3 3 DPAK TO- 220FP TO- 220AB IPAK...