NDP04N62Z
Features
- -
- -
Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb- Free and Ro HS pliant http://onsemi.
VDSS 620 V RDS(ON) (TYP) @ 2 A 1.8 Ω
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter Drain- to- Source Voltage Continuous Drain Current Rq JC Continuous Drain Current Rq JC, TA = 100°C Pulsed Drain Current, VGS @ 10V Power Dissipation Rq JC (Note 1) Gate- to- Source Voltage Single Pulse Avalanche Energy, ID = 4.0 A ESD (HBM) (JESD22- A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads, 0.063″ (1.6 mm) from Case for 10 s Package Body for 10 s Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS Vesd VISO 4500 4.4 (Note 2) 2.8 (Note 2) 18 (Note 2) 28 NDF NDP 620 4.4 2.8 18 96 ±30 120 3000
- - 4.1 2.6 16 83 NDD Unit V A A G (1) A W V m J V V S (3) N- Channel D (2)
4 4 dv/dt IS TL TPKG
4.5...
