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NDF04N62Z, NDP04N62Z, NDD04N62Z N-Channel Power MOSFET 620 V, 1.8 W
Features
• • • •
Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and RoHS Compliant
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VDSS 620 V RDS(ON) (TYP) @ 2 A 1.8 Ω
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter Drain−to−Source Voltage Continuous Drain Current RqJC Continuous Drain Current RqJC, TA = 100°C Pulsed Drain Current, VGS @ 10V Power Dissipation RqJC (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 4.0 A ESD (HBM) (JESD22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads, 0.063″ (1.
NDP04N62Z Datasheet
