Datasheet4U Logo Datasheet4U.com

NDP4050 - N-Channel Enhancement Mode Field Effect Transistor

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

  • 15A, 50V. RDS(ON) = 0.10Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount.

📥 Download Datasheet

Datasheet preview – NDP4050

Datasheet Details

Part number NDP4050
Manufacturer Fairchild
File Size 66.97 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet NDP4050 Datasheet
Additional preview pages of the NDP4050 datasheet.

📁 Similar Datasheet

  • NDP02N60Z - N-Channel Power MOSFET (ON Semiconductor)
  • NDP03N60Z - N-Channel Power MOSFET (ON Semiconductor)
  • NDP04N62Z - N-Channel Power MOSFET (ON Semiconductor)
  • NDP05N50Z - N-Channel Power MOSFET (ON Semiconductor)
  • NDP06N60Z - Single N-Channel TO-220FP MOSFET (ON Semiconductor)
  • NDP06N62Z - N-Channel Power MOSFET (ON Semiconductor)
  • NDP08N50Z - N-Channel Power MOSFET (ON Semiconductor)
  • NDP08N60Z - N-Channel Power MOSFET (ON Semiconductor)
  • NDP10N60Z - N-Channel Power MOSFET (ON Semiconductor)
  • NDP10N60Z - N-Channel Power MOSFET (ON Semiconductor)
Other Datasheets by Fairchild
  • NDP4050L - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • NDP4060 - N-Channel Enhancement Mode Field Effect Transistor
  • NDP4060L - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • NDP408 - N-Channel Enhancement Mode Field Effect Transistor
  • NDP408A - N-Channel Enhancement Mode Field Effect Transistor
  • NDP408AE - N-Channel Enhancement Mode Field Effect Transistor
  • NDP408B - N-Channel Enhancement Mode Field Effect Transistor
  • NDP408BE - N-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription

Click to expand full text
July 1996 NDP4050 / NDB4050 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 15A, 50V. RDS(ON) = 0.10Ω @ VGS=10V.
Published: |