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MMJT9410 - Bipolar Power Transistors NPN Silicon

Key Features

  • Collector.
  • Emitter Sustaining Voltage.
  • High DC Current Gain.
  • VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi. com hFE = 85 (Min) @ IC = 0.8 Adc = 60 (Min) @ IC = 3.0 Adc Low Collector.
  • Emitter Saturation Voltage.
  • VCE(sat) = 0.2 Vdc (Max) @ IC = 1.2 Adc = 0.45 Vdc (Max) @ IC = 3.0 Adc SOT.
  • 223 Surface Mount Packaging Epoxy Meets UL 94 V.
  • 0 @ 0.125 in ESD Ratings: H.

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Datasheet Details

Part number MMJT9410
Manufacturer onsemi
File Size 110.90 KB
Description Bipolar Power Transistors NPN Silicon
Datasheet download datasheet MMJT9410 Datasheet

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www.DataSheet4U.com MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − • High DC Current Gain − • • • • • VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com hFE = 85 (Min) @ IC = 0.8 Adc = 60 (Min) @ IC = 3.0 Adc Low Collector −Emitter Saturation Voltage − VCE(sat) = 0.2 Vdc (Max) @ IC = 1.2 Adc = 0.45 Vdc (Max) @ IC = 3.0 Adc SOT−223 Surface Mount Packaging Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B; > 8000 V Machine Model, C; > 400 V Pb−Free Package is Available POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE(sat) = 0.