MMJT350T1G - Bipolar Power Transistors

onsemi

Download the MMJT350T1G datasheet PDF. This datasheet also covers the MMJT350 variant, as both devices belong to the same bipolar power transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

High Collector.
Emitter Sustaining Voltage.
Excellent DC Current Gain.
Epoxy Meets UL 94 V.
0 @ 0.125 in.
S Prefix for Automotive and Other.

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MMJT350T1G bipolar power transistors by onsemi - Datasheet Preview — Note: The manufacturer provides a single datasheet file (MMJT350-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	MMJT350T1G
Manufacturer	onsemi
File Size	190.58 KB
Description	Bipolar Power Transistors
Datasheet	MMJT350T1G Datasheet

Other Datasheets by onsemi

Part Number	Description
MMJT350T1	Bipolar Power Transistors
MMJT350	Bipolar Power Transistors
MMJT9410	Bipolar Power Transistors NPN Silicon
MMJT9435	Bipolar Power Transistors PNP Silicon

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Bipolar Power Transistors MMJT350 PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features  High Collector−Emitter Sustaining Voltage  Excellent DC Current Gain  Epoxy Meets UL 94 V−0 @ 0.125 in  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* DATA SHEET www.onsemi.com 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS, 2.