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MMJT9435 - Bipolar Power Transistors PNP Silicon

Key Features

  • Pb.
  • Free Packages are Available.
  • Collector.
  • Emitter Sustaining Voltage.
  • VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc High DC Current Gain.
  • = 125 (Min) @ IC = 0.8 Adc hFE = 90 (Min) @ IC = 3.0 Adc Low Collector.
  • Emitter Saturation Voltage.
  • VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc = 0.55 Vdc (Max) @ IC = 3.0 Adc SOT.
  • 223 Surface Mount Packaging Epoxy Meets UL 94, V.
  • 0 @.

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Datasheet Details

Part number MMJT9435
Manufacturer onsemi
File Size 115.57 KB
Description Bipolar Power Transistors PNP Silicon
Datasheet download datasheet MMJT9435 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MMJT9435 Preferred Device Bipolar Power Transistors PNP Silicon Features • Pb−Free Packages are Available • Collector −Emitter Sustaining Voltage − • • • • • VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc High DC Current Gain − = 125 (Min) @ IC = 0.8 Adc hFE = 90 (Min) @ IC = 3.0 Adc Low Collector −Emitter Saturation Voltage − VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc = 0.55 Vdc (Max) @ IC = 3.0 Adc SOT−223 Surface Mount Packaging Epoxy Meets UL 94, V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B; > 8000 V Machine Model, C; > 400 V http://onsemi.com POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE(sat) = 0.