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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMJT9410/D
Preliminary Data Sheet
NPN Silicon
• High DC Current Gain — hFE = 85 (Min) @ IC = 1.0 Adc = 60 (Min) @ IC = 3.0 Adc
Bipolar Power Transistors
• Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc
MMJT9410
Motorola Preferred Device
POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE(sat) = 0.2 VOLTS
• Low Collector –Emitter Saturation Voltage — VCE(sat) = 0.2 Vdc (Max) @ IC = 1.2 Adc = 0.55 Vdc (Max) @ IC = 5.
MMJT9410 Datasheet
