FDMC89521L - Dual N-Channel MOSFET

onsemi

General Description

This device includes two 60 V N

Power 33 (3 mm x 3 mm MLP) package.

The package is enhanced for exceptional thermal performance.

Key Features

Max rDS(on) = 17 mW at VGS = 10 V, ID = 8.2 A.
Max rDS(on) = 27 mW at VGS = 4.5 V, ID = 6.7 A.
Termination is Lead.
free.
These Devices are RoHS Compliant.

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FDMC89521L dual n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMC89521L
Manufacturer	onsemi
File Size	266.57 KB
Description	Dual N-Channel MOSFET
Datasheet	FDMC89521L Datasheet

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MOSFET – Dual N-Channel, POWERTRENCH) 60 V, 8.2 A, 17 mW FDMC89521L General Description This device includes two 60 V N−Channel MOSFETs in a dual Power 33 (3 mm x 3 mm MLP) package. The package is enhanced for exceptional thermal performance. Features • Max rDS(on) = 17 mW at VGS = 10 V, ID = 8.2 A • Max rDS(on) = 27 mW at VGS = 4.5 V, ID = 6.7 A • Termination is Lead−free • These Devices are RoHS Compliant Applications • Battery Protection • Load Switching • Bridge Topologies MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Units VDS Drain to Source Voltage 60 V VGS Gate to Source Voltage ±20 V ID Drain Current A − Continuous TA = 25°C (Note 1a) 8.