FDMC5614P-L701 Datasheet Text
MOSFET
- P-Channel, POWERTRENCH)
-60 V, -13.5 A, 100 mW
FDMC5614P, FDMC5614P-L701
General Description This P- Channel MOSFET is a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5 V
- 20 V).
Features
- Max rDS(on) = 100 mW at VGS =
- 10 V, ID =
- 5.7 A
- Max rDS(on) = 135 mW at VGS =
- 4.5 V, ID =
- 4.4 A
- Low Gate Charge
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability
- These Devices are Pb- Free and are RoHS pliant
Applications
- Power Management
- Load Switch
- Battery Protection
DATA SHEET .onsemi.
Pin 1
SS SG
DDDD
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Bottom
WDFN8 3.3x3.3, 0.65P CASE 511DQ
FDMC5614P, FDMC5614P- L701...