FDMC510P Datasheet Text
MOSFET
- P-Channel, POWERTRENCH)
-20 V, -18 A, 8.0 mW
FDMC510P
General Description This P- Channel MOSFET is produce using onsemi’s advanced
POWERTRENCH® process that has been optimized for rDS(ON), switching performance and ruggedness.
Features
- Max rDS(on) = 8.0 mW at VGS =
- 4.5 V, ID =
- 12 A
- Max rDS(on) = 9.8 mW at VGS =
- 2.5 V, ID =
- 10 A
- Max rDS(on) = 13 mW at VGS =
- 1.8 V, ID =
- 9.3 A
- Max rDS(on) = 17 mW at VGS =
- 1.5 V, ID =
- 8.3 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a Widely Used
Surface Mount Package
- 100% UIL Tested
- HBM ESD Capability Level >2 kV Typical (Note 4)
- This Device is Pb- Free, Halide Free and is RoHS pliant
Applications
- Battery Management
- Load Switch
DATA SHEET .onsemi.
VDS...
