FDMC510P Datasheet Text
FDMC510P P-Channel PowerTrench® MOSFET
FDMC510P
P-Channel PowerTrench® MOSFET
-20 V, -18 A, 8.0 mΩ
Features
- Max rDS(on) = 8.0 mΩ at VGS = -4.5 V, ID = -12 A
- Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -10 A
- Max rDS(on) = 13 mΩ at VGS = -1.8 V, ID = -9.3 A
- Max rDS(on) = 17 mΩ at VGS = -1.5 V, ID = -8.3 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- 100% UIL Tested
- Termination is Lead-free and RoHS pliant
- HBM ESD capability level >2 KV typical (Note 4)
June 2014
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for rDS(ON), switching performance and ruggedness.
Applications
- Battery Management
- Load Switch
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Pin 1
S SG S
DD D D
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ,...
