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CPH3360
Power MOSFET –30V, 303mΩ, –1.6A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.
Features • High Speed Switching • 4V drive • Pb-Free, Halogen Free and RoHS compliance
Typical Applications • DC/DC Converter
SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
−30 V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
ID −1.6 A
Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1%
IDP
−6.4 A
Power Dissipation
When mounted on ceramic substrate (900mm2 × 0.8mm)
PD
0.
CPH3360 Datasheet
