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CPH3350 - P-Channel Power MOSFET

Features

  • Ultrahigh-speed switching.
  • 1.8V drive.
  • Halogen free compliance.
  • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings --20 ±10 --3 --12 1.0 150 --55.

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Datasheet Details

Part number CPH3350
Manufacturer ON Semiconductor
File Size 177.61 KB
Description P-Channel Power MOSFET
Datasheet download datasheet CPH3350 Datasheet
Additional preview pages of the CPH3350 datasheet.

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Full PDF Text Transcription

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Ordering number : ENA0151B CPH3350 P-Channel Power MOSFET –20V, –3A, 83mΩ, Single CPH3 http://onsemi.com Features • Ultrahigh-speed switching • 1.8V drive • Halogen free compliance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings --20 ±10 --3 --12 1.0 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
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