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CPH3351 - Power MOSFET

Features

  • Low On-Resistance.
  • 4V Drive.
  • ESD Diode-Protected Gate.
  • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) VGSS ID Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm) PD Junction Temperature Tj Storage Temperature Tstg Value.
  • 60 ±20.

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Datasheet Details

Part number CPH3351
Manufacturer ON Semiconductor
File Size 402.60 KB
Description Power MOSFET
Datasheet download datasheet CPH3351 Datasheet
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Full PDF Text Transcription

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CPH3351 Power MOSFET −60V, 250mΩ, −1.8A, Single P-Channel www.onsemi.com Features • Low On-Resistance • 4V Drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) VGSS ID Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm) PD Junction Temperature Tj Storage Temperature Tstg Value −60 ±20 −1.8 −7.2 1.0 150 −55 to +150 Unit V V A A W °C °C VDSS −60V RDS(on) Max 250mΩ@ −10V 330mΩ@ −4.5V 350mΩ@ −4V ID Max −1.
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