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CPH3356
Power MOSFET –20V, 137mΩ, –2.5A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This devices is suitable for applications with low gate charge driving or low on resistance requirements.
Features • Low On-Resistance • 1.8V drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance
Typical Applications • Load Switch • Motor Driver
SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
−20 V
Gate to Source Voltage
VGSS
±10 V
Drain Current (DC)
ID −2.
CPH3356 Datasheet
