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BC618
Darlington Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS Rating
Collector −Emitter Voltage Collector −Base Voltage Emitter−Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Junction Temperature Range
Symbol Value
Unit
VCEO VCBO VEBO
IC PD
55
Vdc
80
Vdc
12
Vdc
1.0
Adc
625
mW
5.0
mW/°C
PD
1.5
W
12
mW/°C
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
BC618 Datasheet
