BC640 - High Current Transistors

ON Semiconductor

Datasheet Details

Part number	BC640
Manufacturer	ON Semiconductor
File Size	86.48 KB
Description	High Current Transistors
Datasheet	BC640 Datasheet
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Full PDF Text Transcription

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BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector-Emitter Voltage BC636 BC638 BC640 Collector-Base Voltage BC636 BC638 BC640 Emitter-Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg –55 to +150 Watts mW/°C °C mW mW/°C 1 VCBO –45 –60 –80 –5.0 –0.5 Vdc Adc Symbol VCEO –45 –60 –80 Vdc Value Unit Vdc 3 BASE COLLECTOR 2 1 EMITTER www.DataSheet4U.com 2 3 CASE 29 TO–92 STYLE 14 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RθJA RθJC Max 200 83.

Published: Mar 23, 2005 |