Datasheet4U Logo Datasheet4U.com

BC636 - PNP Epitaxial Silicon Transistor

Datasheet Summary

Description

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Co

Features

  • Switching and Amplifier.

📥 Download Datasheet

Datasheet preview – BC636

Datasheet Details

Part number BC636
Manufacturer ON Semiconductor
File Size 195.72 KB
Description PNP Epitaxial Silicon Transistor
Datasheet download datasheet BC636 Datasheet
Additional preview pages of the BC636 datasheet.

📁 Similar Datasheet

  • BC636 - SILICON PLANAR EPITAXIAL TRANSISTORS (CDIL)
  • BC636 - PNP Type Plastic Encapsulate Transistors (SeCoS)
  • BC636 - High Current Transistors (Motorola Inc)
  • BC636 - PNP medium power transistors (NXP)
  • BC636 - PNP Silicon AF Transistors (Siemens Semiconductor Group)
  • BC636 - PNP EPITAXIAL SILICON TRANSISTOR (Fairchild Semiconductor)
  • BC636 - COMPLEMENTARY SILICON TRANSISTORS (Micro Electronics)
  • BC636TA - PNP EPITAXIAL SILICON TRANSISTOR (Fairchild Semiconductor)
  • BC635 - NPN Silicon Epitaxial Planar Transistor (SEMTECH)
  • BC635 - SILICON PLANAR EPITAXIAL TRANSISTORS (CDIL)
Other Datasheets by ON Semiconductor
  • BC636-16 - High Current Transistors
  • BC635 - High Current Transistors
  • BC637 - High Current Transistors
  • BC638 - PNP Epitaxial Silicon Transistor
  • BC639 - High Current Transistors
  • BC639-16 - High Current Transistors
  • BC618 - Darlington Transistors
  • BC640 - High Current Transistors

Full PDF Text Transcription

Click to expand full text
PNP Epitaxial Silicon Transistor BC636 Features • Switching and Amplifier Applications • Complement to BC635 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector−Emitter Voltage at RBE = 1 kW VCER −45 V Collector−Emitter Voltage VCES −45 V Collector−Emitter Voltage VCEO −45 V Emitter−Base Voltage VEBO −5 V Collector Current IC −1 A Peak Collector Current ICP −1.5 A Base Current IB −100 mA Junction Temperature TJ 150 °C Storage Temperature TSTG −65 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
Published: |