BC618
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC618/D
Darlington Transistors
NPN Silicon
COLLECTOR 1 BASE 2
EMITTER 3
1 2 3
MAXIMUM RATINGS
Rating Collector
- Emitter Voltage Collector
- Base Voltage Emitter
- Base Voltage Collector Current
- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 55 80 12 1.0 625 5.0 1.5 12
- 55 to +150 Unit Vdc Vdc Vdc Adc m W m W/°C Watts m W/°C °C CASE 29- 04, STYLE 17 TO- 92 (TO- 226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq JA Rq JC Max 200 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector
- Emitter Breakdown Voltage (IC = 10 m Adc, VBE = 0) Collector
- Base Breakdown Voltage (IC =...
