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BC489A - High Current Transistors

Features

  • These are Pb.
  • Free Devices.

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Datasheet Details

Part number BC489A
Manufacturer ON Semiconductor
File Size 76.88 KB
Description High Current Transistors
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BC489, BC489A High Current Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Collector −Emitter Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Junction Temperature Range VCEO VCBO VEBO IC PD 80 Vdc 80 Vdc 5.0 Vdc 0.5 Adc 625 mW 5.0 mW/°C PD 1.5 W 12 mW/°C TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
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