BC489 - High Current Transistors

Features

These are Pb.
Free Devices.

ON Semiconductor

Datasheet Details

Part number	BC489
Manufacturer	ON Semiconductor
File Size	76.88 KB
Description	High Current Transistors
Datasheet	BC489 Datasheet
Additional preview pages of the BC489 datasheet.

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Full PDF Text Transcription

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BC489, BC489A High Current Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Collector −Emitter Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Junction Temperature Range VCEO VCBO VEBO IC PD 80 Vdc 80 Vdc 5.0 Vdc 0.5 Adc 625 mW 5.0 mW/°C PD 1.5 W 12 mW/°C TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.

Published: Mar 23, 2005 |