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BC489B - NPN SILICON PLANAR EPITAXIAL TRANSISTORS

This page provides the datasheet information for the BC489B, a member of the BC485 NPN SILICON PLANAR EPITAXIAL TRANSISTORS family.

Description

SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at Ta=25ºC VCEO VCBO VEBO IC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating and Storage Junction Temperature Range TJ, Tstg BC485 45

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Datasheet preview – BC489B

Datasheet Details

Part number BC489B
Manufacturer CDIL
File Size 349.36 KB
Description NPN SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet BC489B Datasheet
Additional preview pages of the BC489B datasheet.

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Other Datasheets by CDIL
  • BC489 - NPN SILICON PLANAR EPITAXIAL TRANSISTORS
  • BC489A - NPN SILICON PLANAR EPITAXIAL TRANSISTORS
  • BC489L - NPN SILICON PLANAR EPITAXIAL TRANSISTORS
  • BC485 - NPN SILICON PLANAR EPITAXIAL TRANSISTORS
  • BC485A - NPN SILICON PLANAR EPITAXIAL TRANSISTORS
  • BC485B - NPN SILICON PLANAR EPITAXIAL TRANSISTORS
  • BC485L - NPN SILICON PLANAR EPITAXIAL TRANSISTORS
  • BC487 - NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Full PDF Text Transcription

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC485, A, B, L BC487, A, B, L BC489, A, B, L TO-92 Plastic Package CB E High Current Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at Ta=25ºC VCEO VCBO VEBO IC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating and Storage Junction Temperature Range TJ, Tstg BC485 45 45 BC487 60 60 5.0 1.0 625 5.0 1,5 12 - 55 to +150 BC489 80 80 THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 83.
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