BC488B - High Current Transistors

Features

Pb.
Free Package is Available.
http://onsemi. com.

ON Semiconductor

Datasheet Details

Part number	BC488B
Manufacturer	ON Semiconductor
File Size	104.20 KB
Description	High Current Transistors
Datasheet	BC488B Datasheet
Additional preview pages of the BC488B datasheet.

📁 Similar Datasheet

BC488B - HIGH CURRENT TRANSISTORS (Motorola)
BC488 - PNP SILICON PLANAR EPITAXIAL TRANSISTOR (Micro Electronics)
BC488 - HIGH CURRENT TRANSISTORS (Motorola)
BC488A - HIGH CURRENT TRANSISTORS (Motorola)
BC488L - HIGH CURRENT TRANSISTORS (Motorola)
BC485 - NPN SILICON PLANAR EPITAXIAL TRANSISTOR (Micro Electronics)
BC485 - NPN SILICON PLANAR EPITAXIAL TRANSISTORS (CDIL)
BC485 - HIGH CURRENT TRANSISTORS (Motorola)
BC485A - HIGH CURRENT TRANSISTORS (Motorola)
BC485A - NPN SILICON PLANAR EPITAXIAL TRANSISTORS (CDIL)

Other Datasheets by ON Semiconductor

BC487 - High Current Transistors
BC487B - High Current Transistors
BC489 - High Current Transistors
BC489A - High Current Transistors
BC447 - High Voltage Transistors
BC449 - High Voltage Transistors
BC449A - High Voltage Transistors
BC490 - High Current Transistors

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com BC488B High Current Transistors PNP Silicon Features • Pb−Free Package is Available* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter-Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg −55 to +150 W mW/°C °C 1 2 3 mW mW/°C TO−92 CASE 29 STYLE 17 Value −60 −60 −4.0 −1.0 Unit Vdc Vdc Vdc Adc 2 BASE 3 EMITTER Maximum ratings are those values beyond which device damage can occur.

Published: Jul 28, 2010 |