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PHN210T
Dual N-channel TrenchMOS intermediate level FET
Rev. 02 — 15 December 2010 Product data sheet
1. Product profile
1.1 General description
Dual intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Suitable for high frequency applications due to fast switching characteristics Suitable for logic level gate drive sources Suitable for low gate drive sources
1.3 Applications
DC-to-DC converters Logic level translators Motor and relay drivers
1.4 Quick reference data
Table 1.
PHN210T Datasheet
