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PHN203 - Dual N-channel enhancement mode TrenchMOS transistor

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.

The device has very low on-state resistance.

It is intended for use in dc to dc converters and general purpose switching applications.

Features

  • Dual device.
  • Low threshold voltage.
  • Fast switching.
  • Logic level compatible.
  • Surface mount package PHN203 SYMBOL d1 d1 d2 d2 QUICK.

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Full PDF Text Transcription

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Philips Semiconductors Product specification Dual N-channel enhancement mode TrenchMOSTM transistor FEATURES • Dual device • Low threshold voltage • Fast switching • Logic level compatible • Surface mount package PHN203 SYMBOL d1 d1 d2 d2 QUICK REFERENCE DATA VDS = 25 V ID = 6.3 A RDS(ON) ≤ 30 mΩ (VGS = 10 V) RDS(ON) ≤ 55 mΩ (VGS = 4.5 V) s1 g1 s2 g2 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96-1 (SO8) surface mounting package.
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