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PHN210 - Dual N-channel enhancement mode TrenchMOS transistor

Description

Dual N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology.

Motor and relay drivers

d.c.

to d.c.

Logic level translator The PHN210 is supplied in the SOT96-1 (SO8) surface mounting package.

Features

  • Dual device.
  • Low threshold voltage.
  • Fast switching.
  • Logic level compatible.
  • Surface mount package PHN210 SYMBOL d1 d1 d2 d2 QUICK.

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Full PDF Text Transcription

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Philips Semiconductors Product specification Dual N-channel enhancement mode TrenchMOSTM transistor FEATURES • Dual device • Low threshold voltage • Fast switching • Logic level compatible • Surface mount package PHN210 SYMBOL d1 d1 d2 d2 QUICK REFERENCE DATA VDS = 30 V ID = 3.4 A RDS(ON) ≤ 100 mΩ (VGS = 10 V) RDS(ON) ≤ 200 mΩ (VGS = 4.5 V) s1 g1 s2 g2 GENERAL DESCRIPTION Dual N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:• Motor and relay drivers • d.c. to d.c. converters • Logic level translator The PHN210 is supplied in the SOT96-1 (SO8) surface mounting package.
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