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PHE13009 - Silicon Diffused Power Transistor

Description

The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

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Datasheet Details

Part number PHE13009
Manufacturer NXP
File Size 59.81 KB
Description Silicon Diffused Power Transistor
Datasheet download datasheet PHE13009 Datasheet
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Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time CONDITIONS VBE = 0 V TYP. 0.32 0.1 MAX. 700 700 400 12 24 80 1.0 40 0.5 UNIT V V V A A W V µs Tmb ≤ 25 ˚C IC = 5.0 A;IB = 1.
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