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PHE13002AU - Silicon Diffused Power Transistor

Description

High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

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Datasheet Details

Part number PHE13002AU
Manufacturer NXP
File Size 70.24 KB
Description Silicon Diffused Power Transistor
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Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFE tfi PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time (Inductive) CONDITIONS VBE = 0 V TYP. 0.27 12 56 MAX. 600 600 300 1.5 3 50 1.0 19 76 UNIT V V V A A W V ns Tmb ≤ 25 ˚C IC = 1.0 A;IB = 0.2 A IC = 1.
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