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PHE13007 - Silicon Diffused Power Transistor

Description

The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

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Datasheet Details

Part number PHE13007
Manufacturer NXP
File Size 132.71 KB
Description Silicon Diffused Power Transistor
Datasheet download datasheet PHE13007 Datasheet
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Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO VEBO IC ICM Ptot VCEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Emitter-Base voltage (IB = 0) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time CONDITIONS VBE = 0 V TYP. 0.35 40 MAX. 700 700 400 9 8 16 80 2.
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