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TO-220AB
PHE13005
Silicon diffused power transistor
21 January 2014
Product data sheet
1. General description
High voltage, high speed NPN planar-passivated power switching transistor in a SOT78 plastic package intended for use in high frequency electronic lighting ballast applications
2. Features and benefits
• Fast switching • High voltage capability of 700 V • Low thermal resistance
3. Applications
• Electronic lighting ballasts
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
IC
collector current
DC; Fig. 4; Fig. 1; Fig. 2
Ptot total power dissipation Tmb ≤ 25 °C; Fig. 3
VCESM
collector-emitter peak VBE = 0 V voltage
Static characteristics
hFE
DC current gain
IC = 1 A; VCE = 5 V; Tmb = 25 °C;
Fig.