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BUK7Y18-75B - N-channel TrenchMOS standard level FET

Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

2.

Features

  • Q101 compliant.
  • Suitable for standard level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 3.

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LFPAK56 BUK7Y18-75B N-channel TrenchMOS standard level FET 1 March 2013 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • Q101 compliant • Suitable for standard level gate drive sources • Suitable for thermally demanding environments due to 175 °C rating 3. Applications • 12 V, 24 V and 42 V loads • Automotive systems • DC-to-DC converters • Engine management • General purpose power switching • Motors, lamps and solenoids • Transmission control 4. Quick reference data Table 1.
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