BUK7Y102-100B
description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
- Q101 pliant
- Suitable for standard level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
- 12 V, 24 V and 42 V loads
- Automotive systems
- DC-to-DC converters
- General purpose power switching
- Solenoid drivers
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 4 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 100 15 60 V A W
Static characteristics RDSon VGS = 10 V; ID = 5 A; Tj = 25 °C; see Figure 12; see...
