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BUK7Y18-55B
N-channel TrenchMOS standard level FET
Rev. 04 — 7 April 2010 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads Advanced braking systems (ABS) Automotive systems Engine management General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
BUK7Y18-55B Datasheet
