BUK7Y12-100E
description
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using Trench MOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
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Q101 pliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
3. Applications
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12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
4. Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 VGS = 10 V; ID = 25 A; VDS = 80 V; Tj = 25 °C; Fig. 13; Fig. 14 21 n C Min Typ Max 100 85 238 Unit V A W
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