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BUK7909-75ATE - N-channel TrenchPLUS standard level FET

Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

The devices include TrenchPLUS diodes for ElectroStatic Discharge (ESD) protection and temperature sensing.

Features

  • Allows responsive temperature monitoring due to integrated temperature sensor.
  • Electrostatically robust due to integrated protection diodes.
  • Low conduction losses due to low on-state resistance.
  • Q101 compliant.
  • Suitable for standard level gate drive sources 1.3.

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Full PDF Text Transcription

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BUK7909-75ATE N-channel TrenchPLUS standard level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Allows responsive temperature monitoring due to integrated temperature sensor „ Electrostatically robust due to integrated protection diodes „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Suitable for standard level gate drive sources 1.
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