BUK7230-55A
description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
- Low conduction losses due to low on-state resistance
- Q101 pliant
- Suitable for standard level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
- 12 V and 24 V loads
- Automotive and general purpose power switching
- Motors, lamps and solenoids
1.4 Quick reference data
Table 1. VDS ID Ptot Quick reference Conditions VGS = 5 V; Tmb = 25 °C; see Figure 1 and 3 Tmb = 25 °C; see Figure 2 Min Typ Max 55 38 88 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation Symbol Parameter
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID...
