BUK7210-55B
description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
- 185 °C rated
- Q101 pliant
- Standard level patible
- Very low on-state resistance
1.3 Applications
- 12 V and 24 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
1.4 Quick reference data
Table 1. VDS ID Quick reference Conditions VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3; VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 10; see Figure 9 ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped inductive load [1] Min Typ Max 55 75 Unit V A drain-source voltage Tj ≥ 25 °C; Tj ≤ 185 °C drain current Symbol Parameter
Static characteristics RDSon drain-source on-state resistance 8.5 10 mΩ
Avalanche...
