BUK7226-75A
description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features
- 175 °C rated
- Q101 pliant
- Low on-state resistance
- Standard level patible
1.3 Applications
- 12 V, 24 V and 42 V loads
- General purpose power switching
- Automotive systems
- Motors, lamps and solenoids
1.4 Quick reference data
Table 1. VDS ID Ptot Tj RDSon Quick reference Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 and 4 Tmb = 25 °C; see Figure 2
[1]
Symbol Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance
Min -55
Typ 22
Max 75 45 158 175 26
Unit V A W °C mΩ
Static characteristics VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 and 13
- Avalanche ruggedness EDS(AL)S...
