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BLW77 - HF/VHF power transistor

Description

N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f.

and v.h.f.

bands.

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Other Datasheets by NXP Semiconductors

Part Number Description
BLW76 HF/VHF power transistor
BLW78 HF/VHF power transistor
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BLW30 VHF power transistor
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Full PDF Text Transcription (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET BLW77 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear amplifier in the h.f. band. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Transistors are delivered in matched hFE groups. The transistor has a 1⁄2" flange envelope with a ceramic cap. All leads are isolated from the flange. BLW77 QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION s.s.b. (class-AB) c.w. (class-B) Note 1. At 130 W P.E.P.
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