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BLV59 - UHF linear power transistor

Description

NPN silicon planar epitaxial power transistor encapsulated in a 6-lead SOT171A flange package with a ceramic cap.

All leads are isolated from the flange.

Features

  • Internal input matching to achieve an optimum wideband capability and high power gain.
  • Emitter-ballasting resistors for lower junction temperatures.
  • Titanium-platinum-gold metallization ensures long life and excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLV59 UHF linear power transistor Product specification Supersedes data of March 1993 1998 Jan 09 Philips Semiconductors Product specification UHF linear power transistor FEATURES • Internal input matching to achieve an optimum wideband capability and high power gain • Emitter-ballasting resistors for lower junction temperatures • Titanium-platinum-gold metallization ensures long life and excellent reliability. APPLICATIONS • UHF linear amplifiers in television transmitters. DESCRIPTION NPN silicon planar epitaxial power transistor encapsulated in a 6-lead SOT171A flange package with a ceramic cap. All leads are isolated from the flange.
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