handbook, halfpage
BLV57
PINNING - SOT161A PIN 1 2 3 4 5 6 7 8 SYMBOL e e c2 b2 c1 b1 e e emitter emitter collector 2 base 2 collector 1 base 1 emitter emitter DESCRIPTION
Two n-p-n silicon planar epitaxial transistor sections in one package to be used as push-pull amplifier, primarily intended f
Features
internally matched input for wideband operation and high power gain.
internal midpoint (r. f. ground) reduces negative feedback and improves power gain.
increased input and output impedances (compared with single-ended transistors) simplify wideband matching.
length of the external emitter leads is not critical.
diffused emitter ballasting resistors for an optimum temperature profile.
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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV57 UHF linear push-pull power transistor
Product specification Supersedes data of August 1986 1998 Feb 09
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
FEATURES • internally matched input for wideband operation and high power gain • internal midpoint (r.f. ground) reduces negative feedback and improves power gain • increased input and output impedances (compared with single-ended transistors) simplify wideband matching • length of the external emitter leads is not critical • diffused emitter ballasting resistors for an optimum temperature profile • gold metallization ensures excellent reliability.
BLV57 Datasheet
