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BLT82 - UHF power transistor

Description

NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 (SO8) SMD package.

Fig.1 Simplified outline and symbol.

Features

  • High efficiency.
  • High gain.
  • Internal pre-matched input.

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📁 Similar Datasheet

Part Number Description Manufacturer
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLT82 UHF power transistor Product specification 1996 Feb 05 Philips Semiconductors Product specification UHF power transistor FEATURES • High efficiency • High gain • Internal pre-matched input. APPLICATIONS • Hand-held radio equipment in common emitter class-AB operation for 900 MHz Time Division Multiple Axis (TDMA) communication systems. PINNING - SOT96-1 1 4 MAM227 handbook, halfpage 8 BLT82 DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 (SO8) SMD package. 5 c b e PIN 1, 8 2, 4, 5, 7 3, 6 SYMBOL b e c base DESCRIPTION emitter collector Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter test circuit (see Fig.5).
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