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BLT80 - UHF power transistor

Description

NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package.

Fig.1 Simplified outline and symbol.

Features

  • SMD encapsulation.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. APPLICATIONS • Hand-held radio equipment in the 900 MHz communication band. b handbook, halfpage BLT80 4 c DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 2 3 e MAM043 - 1 PINNING - SOT223 PIN 1 2 3 4 SYMBOL e b e c base emitter collector DESCRIPTION emitter Top view Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter test circuit (see Fig.7). MODE OF OPERATION CW, class-B narrow band f (MHz) 900 VCE (V) 7.
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