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BLT81 - UHF power transistor

Description

NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package.

PINNING - SOT223 PIN 1 2 3 4 SYMBOL e b e c base emitter collector Fig.1 Simplified outline and symbol.

Features

  • SMD encapsulation.
  • Gold metallization ensures excellent reliability. handbook, halfpage BLT81 4 c b.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification Supersedes data of November 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. handbook, halfpage BLT81 4 c b APPLICATIONS • Hand-held radio equipment in the 900 MHz communication band. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. PINNING - SOT223 PIN 1 2 3 4 SYMBOL e b e c base emitter collector Fig.1 Simplified outline and symbol. DESCRIPTION emitter e 1 Top view 2 3 MAM043 - 1 QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter test circuit (see Fig.7).
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