Click to expand full text
PMZ950UPE
10 July 2014
SO
T8 83
20 V, P-channel Trench MOSFET
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• • • •
Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.48 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.02 Ω
3. Applications
• • • •
Relay driver High-speed line driver High-side load switch Switching circuits
4. Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.
PMZ950UPE Datasheet
