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PMZ270XN
N-channel TrenchMOS extremely low level FET
Rev. 01. — 21 February 2008
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Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features
I Profile 55 % lower than SOT23 I Low on-state resistance I Leadless package I Footprint 90 % smaller than SOT23 I Low threshold voltage I Fast switching
1.3 Applications
I Driver circuits I DC-to-DC converters I Load switching in portable appliances
1.4 Quick reference data
I VDS ≤ 20 V I RDSon ≤ 340 mΩ I ID ≤ 2.15 A I Ptot ≤ 2.50 W
2. Pinning information
Table 1.
PMZ270XN Datasheet
