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PMZ350XN - N-channel TrenchMOS standard level FET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

Features

  • I Profile 55 % lower than SOT23 I Low on-state resistance I Leadless package I Footprint 90 % smaller than SOT23 I Low threshold voltage I fast switching 1.3.

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Datasheet Details

Part number PMZ350XN
Manufacturer NXP Semiconductors
File Size 74.12 KB
Description N-channel TrenchMOS standard level FET
Datasheet download datasheet PMZ350XN Datasheet

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Full PDF Text Transcription

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PMZ350XN N-channel TrenchMOS standard level FET Rev. 01 — 21 February 2008 BOTTOM VIEW Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features I Profile 55 % lower than SOT23 I Low on-state resistance I Leadless package I Footprint 90 % smaller than SOT23 I Low threshold voltage I fast switching 1.3 Applications I Driver circuits I DC-to-DC converters I Load switching in portable appliances 1.4 Quick reference data I VDS ≤ 30 V I RDSon ≤ 420 mΩ I ID ≤ 1.87 A I Ptot ≤ 2.50 W 2. Pinning information Table 1.
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