Datasheet4U Logo Datasheet4U.com

PMZ350UPE - P-channel MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Trench MOSFET technology.
  • Low threshold voltage.
  • Very fast switching.
  • ElectroStatic Discharge (ESD) protection > 1.8 kV HBM.
  • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMZ350UPE P-channel Trench MOSFET NXP
PMZ350XN N-channel TrenchMOS standard level FET NXP Semiconductors
PMZ320UPE P-channel Trench MOSFET NXP
PMZ370UNE N-channel Trench MOSFET NXP
PMZ390UN N-channel TrenchMOS standard level FET NXP Semiconductors

Other Datasheets by nexperia

Part Number Description
PMZ320UPE P-channel MOSFET
PMZ390UNE N-channel MOSFET
PMZ1200UPE P-channel MOSFET
PMZ130UNE N-channel MOSFET
PMZ200UNE N-channel MOSFET

Full PDF Text Transcription

Click to expand full text
PMZ350UPE 20 V, P-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 1.8 kV HBM • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm 3. Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 4. Quick reference data Table 1.
Published: |