Click to expand full text
PMZ250UN
N-channel TrenchMOS extremely low level FET
Rev. 01 — 21 February 2008
BOTTOM VIEW
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features
I Profile 55 % lower than SOT23 I Lower on-state resistance I Leadless package I Footprint 90 % smaller than SOT23 I Low threshold voltage I Fast switching
1.3 Applications
I Driver circuits I DC-to-DC converters I Load switching in portable appliances
1.4 Quick reference data
I VDS ≤ 20 V I RDSon ≤ 300 mΩ I ID ≤ 2.28 A I Ptot ≤ 2.50 W
2. Pinning information
Table 1.
PMZ250UN Datasheet
