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BUK9230-55A - TrenchMOS FET

General Description

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

Product availability: BUK9230-55A in SOT428 (D-PAK).

2.

Key Features

  • s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3.

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Full PDF Text Transcription for BUK9230-55A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUK9230-55A. For precise diagrams, and layout, please refer to the original PDF.

BUK9230-55A TrenchMOS™ logic level FET Rev. 03 — 30 January 2001 M3D300 www.DataSheet4U.com Product specification 1. Description N-channel enhancement mode field-effect pow...

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specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: BUK9230-55A in SOT428 (D-PAK). 2. Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids. c c 4.

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